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| 型号： | MRF19125R5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/12页 |
| 文件大小： | 391K |
| 描述： | IC MOSFET RF N-CHAN NI-880 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 24V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.3A |
| 功率 - 输出： | 24W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880 |
| 供应商设备封装： | NI-880 |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF19125R3
TYPICAL CHARACTERISTICS
?55
?50
1500 mA
?45
?40
?35
?30
?25
?20
10 150100
4
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS Avg.) N?CDMA
IM3 (dBc), ACPR (dBc)
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB)
, DRAIN EFFICIENCY (%)
η
Figure 6. 2-Carrier N-CDMA Broadband
Performance
Figure 7. CW Performance
0
5
10
15
20
25
30
?70
?63
?56
?49
?42
?35
?28
11040
4
VDD
= 26 Vdc, I
DQ
= 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
?70
?60
?50
?40
?30
?20
5
11
23
29
35
41
10 150100
η
INTERMODULATION DISTORTION (dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 26 Vdc
IDQ
= 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
IM3 (dBc), ACPR (dBc), IRL,
1100 mA
1700 mA
1300 mA
IDQ
= 900 mA
12
14
ACPR
16
18
20
22
24
?60
?50
?40
?30
?20
?10
0
1920 19901930 1940 1950 1960 1970 1980 2000
VDD
= 26 Vdc
Pout
= 24 Watts (Avg.)
IDQ
= 1300 mA
2?Carrier N?CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
Gps
η
IRL
Pout, OUTPUT POWER (WATTS)
, INPUT POWER (WATTS), G
ps
, POWER GAIN (dB)
P
in
0
2
4
6
8
10
12
14
0
8
16
24
32
40
48
56
2 20010 100
VDD
= 26 Vdc
IDQ
= 1300 mA
f = 1960 MHz
Gps
Pin
η
, DRAIN EFFICIENCY (%)
η
η
IM3
Gps
ACPR
17
?80
7th Order
5th Order
3rd Order
VDD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
IM3
33
34
35
36
37
38
?32
?31
?30
?29
?28
?27
24 24.5 25 25.5 26 26.5 27 27.5 28
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULATION DISTORTION (dBc)
IMD,
, DRAIN EFFICIENCY (%)
η
η
IDQ
= 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
32
?33
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