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参数资料
| 型号： | MRF20060R |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 451-06, 3 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 97K |
| 代理商： | MRF20060R |
MRF20060R MRF20060RS
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
Reverse Base–Emitter Breakdown Voltage
(IB = 10 mAdc, IC = 0)
Zero Base Voltage Collector Leakage Current
(VCE = 30 Vdc, VBE = 0)
V(BR)CEO
25
28
—
Vdc
V(BR)CES
60
69
—
Vdc
V(BR)CBO
60
69
—
Vdc
V(BR)EBO
3
3.5
—
Vdc
ICES
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, IC = 1 Adc)
hFE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
Cob
—
55
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gpe
9
9.8
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
33
35
—
%
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
– 32
– 30
dB
Input Return Loss
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
12
19
—
dB
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF20060S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER BROADBAND NPN BIPOLAR |
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