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参数资料
| 型号： | MRF20060R |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 451-06, 3 PIN |
| 文件页数： | 3/12页 |
| 文件大小： | 97K |
| 代理商： | MRF20060R |
3
MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
Figure 1. 1.93 – 2 GHz Test Fixture Electrical Schematic
B1
C1
C2, C4, C13
C3, C14
C5
C6, C12
C7, C9
C8, C10
C11
C15
Ferrite Bead, P/N 5659065/3B, Ferroxcube
100
μ
F, 50 V, Electrolytic Capacitor, Mallory
0.6–4.0 pF, Variable Capacitor, Gigatrim, Johanson
0.1
μ
F, Chip Capacitor, Kemit
15 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
91 pF, B Case Chip Capacitor, ATC
24 pF, B Case Chip Capacitor, ATC
13 pF, B Case Chip Capacitor, ATC
470
μ
F, 50 V, Electrolytic Capacitor, Mallory
D1
L1, L5
L2, L4
L3
R1
R2
R3, R4
Q1
Q2
Board
Diode, Motorola (MURS160T3)
12 Turns, 22 AWG, 0.140
″
Choke
.5 inch of 20 AWG
12.5 nH Inductor
2 x 130
, 1/8 W Chip Resistor, Rohm
2 x 100
, 1/8 W Chip Resistor, Rohm
10
, 1/2 W, Resistor
Transistor, PNP Motorola (BD136)
Transistor, NPN Motorola (MJD47)
Glass Teflon
, Arlon GX–0300–55–22,
ε
r
RF
INPUT
RF
OUTPUT
DUT
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
VBB
VCC
Q2
Q1
D1
R1
C1
C3
C6
R3
L1
L3
R2
C7
C8
L2
C5
C2
C4
C9
C10
L4
C13
B1
C12
C14 C15
R4
L5
C11
+
+
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF20060S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER BROADBAND NPN BIPOLAR |
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| MRF206-A | 制造商:NKK 制造商全称:Nihon Kaiheiki Industry Co. Ltd. 功能描述:Half-Inch Diameter Process Sealed Rotaries |
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