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参数资料
| 型号： | MRF21180S |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-1230S, CASE 375E-03, 5 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 356K |
| 代理商： | MRF21180S |
1
MRF21180 MRF21180S
MOTOROLA RF DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — –41 dBc
Internally Input and Output Matched, for Ease of Use
High Gain, High Efficiency, and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
380
2.17
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.46
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21180/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21180
MRF21180S
2170 MHz, 170 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF21180
CASE 375E–03, STYLE 1
NI–1230S
MRF21180S
Motorola, Inc. 2003
REV 3
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相关代理商/技术参数 |
参数描述 |
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