参数资料
型号: MRF21180S
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-1230S, CASE 375E-03, 5 PIN
文件页数: 9/12页
文件大小: 356K
代理商: MRF21180S
MRF21180 MRF21180S
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc)
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2–Carrier W–CDMA Broadband
Performance
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc),
IRL,
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS Avg.) W-CDMA
Figure 8. Two–Tone Intermodulation
Distortion and Drain Efficiency versus Drain
Supply
50
0
30
1
-60
-30
Gps
ACPR
IM3
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
25
-35
20
-40
15
-45
10
-50
5
-55
10
220
-65
-25
10
5
45
3rd Order
η
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
-30
40
-35
35
-40
30
-45
25
-50
20
-55
15
-60
10
100
5th Order
7th Order
ACPR
2190
10
24
2090
-44
-9
IRL
Gps
η
IM3
VDD = 28 Vdc, Pout = 38 W (Avg.)
IDQ = 1700 mA
f1 = f - 5 MHz, f2 = f + 5 MHz
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
22
-14
20
-19
18
-24
16
-29
14
-34
12
-39
2170
2150
2130
2110
220
9.5
12.5
1
0
48
Gps
η
VDD = 28 Vdc
IDQ = 1700 mA
f = 2140 MHz
12
40
11.5
32
11
24
10.5
16
10
8
100
10
IMD
29
31
38
24
-32
-25
η
Pout = 170 W (PEP)
IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
37
-26
36
-27
35
-28
34
-29
33
-30
32
-31
28
27
26
25
220
-50
-25
10
IDQ = 1300 mA
1500 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
-30
-35
-40
-45
100
1700 mA
2100 mA
1900 mA
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