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| 型号： | MRF5S19100HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 599K |
| 描述： | MOSFET RF N-CHAN 28V 22W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF5S19100HR3 MRF5S19100HSR3
3
RF Device Data
Freescale Semiconductor
Z9 0.590″
x 0.071
″
Microstrip
Z10 0.450″
x 1.133
″
Microstrip
Z11 0.450″
x 0.141
″
Microstrip
Z12 0.490″
x 0.080
″
Microstrip
Z13 0.085″
x 0.080
″
Microstrip
Z14 1.124″
x 0.080
″
Microstrip
PCB Arlon GX-0300-55-22, 0.030″, εr
= 2.55
Figure 1. MRF5S19100HR3(SR3) Test Circuit Schematic
Z1, Z3 0.140″
x 0.080
″
Microstrip
Z2 0.450″
x 0.080
″
Microstrip
Z4 0.525″
x 0.080
″
Microstrip
Z5 0.636″
x 0.141
″
Microstrip
Z6 0.650″
x 0.050
″
Microstrip
Z7 0.320″
x 1.299
″
Microstrip
Z8 0.091″
x 1.133
″
Microstrip
+
C3
R2
VBIAS
VSUPPLY
+
C13
+
C9
+
C8
C15
C6
C7
C16
C1
RF
OUTPUT
RF
INPUT
R1
Z1 Z2 Z3 Z4 Z5
Z6
Z9
Z11 Z12 Z13
DUT
C12
C11
R4
W1
C2
Z10
Z8
B1
R3
C4
C5
Z7
+
C14
Z14
C17
+
C10
Table 5. MRF5S19100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
95F786
Newark
C1
22 pF Chip Capacitor
100B220CP 500X
ATC
C2
10 pF Chip Capacitor
100B100CP 500X
ATC
C3
1 μF, 50 V Tantalum Capacitor
T494C105(1)050AS
Kemet
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C11
1K pF Chip Capacitors
100B102JP 500X
ATC
C6
2.7 pF Chip Capacitor
100B2R7BP 500X
ATC
C7
4.3 pF Chip Capacitor
100B4R3JP 500X
ATC
C8
10 μF, 35 V Tantalum Capacitor
T494D106(1)035AS
Kemet
C9, C10, C13, C14
22 μF, 35 V Tantalum Capacitors
T494X226(1)035AS
Kemet
C15
0.6 ? 4.5 Gigatrim Variable Capacitor
44F3358
Newark
C16
2.2 pF Chip Capacitor
100B2R2BP 500X
ATC
C17*
0.3 pF Chip Capacitor
100B0R3BP 500X
ATC
R1
1 k
Chip Resistor
D5534M07B1K00R
Newark
R2
560 k
Chip Resistor
CR1206 564JT
Newark
R3, R4
12
Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
1 turn 14 gauge wire
* Need for part will vary from fixture to fixture.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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