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| 型号： | MRF5S19100HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/12页 |
| 文件大小： | 599K |
| 描述： | MOSFET RF N-CHAN 28V 22W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF5S19100HR3 MRF5S19100HSR3
TYPICAL CHARACTERISTICS
0
35
1
?70
?21
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
VDD
= 28 Vdc, I
DQ
= 1000 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N?CDMA, 2.5 MHz @ 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
IM3
?28
30
?35
25
?42
20
?49
15
?56
10
5
?63
10
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
108
107
106
120 140 160 180 200
75
MTTF FACTOR (HOURS x AMPS
2
)
N-CDMA TEST SIGNAL
ηD
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 10. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
IS?95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
f, FREQUENCY (MHz)
?100
0
Figure 11. 2-Carrier N-CDMA Spectrum
?10
?20
?30
?40
?50
?60
?70
?80
?90
?ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
?IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
?7.5 7.56
1.5 4.53
0
?1.5
?3
?4.5
?6
(dB)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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