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参数资料
| 型号： | MRF5S9101MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/20页 |
| 文件大小： | 542K |
| 描述： | MOSFET RF N-CH 26V 100W TO2704 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 700mA |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF5S9101MR1 MRF5S9101MBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 400
μAdc)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 700 mAdc)
VGS(Q)
?
3.7
?
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2
Adc)
VDS(on)
?
0.21
0.3
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 6
Adc)
gfs
?
7
?
S
Dynamic Characteristics (1)
Output Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
70
?
pF
Reverse Transfer Capacitance
(VDS
= 26
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.2
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W, I
DQ
= 700 mA, f = 960 MHz
Power Gain
Gps
16
17.5
19
dB
Drain Efficiency
ηD
56
60
?
%
Input Return Loss
IRL
?
-15
-9
dB
Pout
@ 1 dB Compression Point, CW
P1dB
100
110
?
W
1. Part is internally input matched.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9101N | 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270 |
| MRF5S9101NBR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9101NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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