参数资料
型号: MRF5S9101MR1
厂商: Freescale Semiconductor
文件页数: 2/20页
文件大小: 542K
描述: MOSFET RF N-CH 26V 100W TO2704
标准包装: 500
晶体管类型: LDMOS
频率: 960MHz
增益: 17.5dB
电压 - 测试: 26V
额定电流: 10µA
电流 - 测试: 700mA
功率 - 输出: 100W
电压 - 额定: 68V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
10
RF Device Data
Freescale Semiconductor
MRF5S9101MR1 MRF5S9101MBR1
Figure 15. MRF5S9101MR1(MBR1) 800 MHz Test Circuit Component Layout
CUT OUT AREA
C1
VGG
800 MHz
MRF5S9101N
Rev 2
VDD
R2
R1 C4 C7
R3
C16
C17
C10
C22
C19
C21
C8 C5
C2
C14
C13
C11
C18 C20
C12 C15
C9 C6
C3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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相关代理商/技术参数
参数描述
MRF5S9101N 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270
MRF5S9101NBR1 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9101NR1 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor