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| 型号： | MRF5S9101MR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 15/20页 |
| 文件大小： | 542K |
| 描述： | MOSFET RF N-CH 26V 100W TO2704 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 700mA |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF5S9101MR1 MRF5S9101MBR1
Z1 0.698″
x 0.827
″
Microstrip
Z2 0.720″
x 0.788
″
Microstrip
Z3 0.195″
x 0.087
″
Microstrip
Z4 0.524″
x 0.087
″
Microstrip
Z5 0.233″
x 0.087
″
Microstrip
Z6 0.560″
x 0.087
″
Microstrip
Z7 0.095″
x 0.827
″
Microstrip
Z8 0.472″
x 0.087
″
Microstrip
Z9 0.384″
x 0.087
″
Microstrip
Z10 1.491″
x 0.087
″
Microstrip
Z11, Z12* 1.6″
x 0.089
″
Microstrip
(quarter wave length for supply purpose)
Z13* 1.2″
x 0.059
″
Microstrip
(quarter wave length for bias purpose)
PCB Taconic TLX8-0300, 0.030″, εr
= 2.55
*Variable for tuning
Figure 1. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Schematic
RF
INPUT
RF
OUTPUT
C1
C10
VSUPPLY
Z6
VBIAS
Z10
Z4
C11
C21
+
C7
C19
C8
C2
C5
Z2
C18
C20
C13
C16
C12
Z1
DUT
Z8
R1
C4
R2
Z13
R3
C17
Z11
C9
C3
C6
Z12
C14
C15
Z5
Z9
Z7
Z3
Table 6. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
4.7 F Chip Capacitors (2220)
GRM55ER7H475KA01
Murata
C4, C5, C6
10 nF 200B Chip Capacitors
200B103MW
ATC
C7, C8, C9
33 pF 100B Chip Capacitors
100B330JW
ATC
C10, C11
22 pF 100B Chip Capacitors
100B220GW
ATC
C12, C13
10 pF 100B Chip Capacitors
100B100GW
ATC
C14, C15, C16, C17
8.2 pF 100B Chip Capacitors
100B8R2CW
ATC
C18
5.6 pF 100B Chip Capacitor
100B5R6CW
ATC
C19
4.7 pF 100B Chip Capacitor
100B4R7BW
ATC
C20
3.9 pF 100B Chip Capacitor
100B3R9BW
ATC
C21
220 F, 50 V Electrolytic Capacitor, Axial
516D227M050NP7B
Sprague
R1, R2
10 k, 1/4 W Chip Resistors (1206)
R3
10 , 1/4 W Chip Resistor (1206)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9101N | 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270 |
| MRF5S9101NBR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9101NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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