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参数资料
| 型号： | MRF6S27015NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 629K |
| 描述： | IC MOSFET RF N-CHAN TO270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.6GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 160mA |
| 功率 - 输出： | 3W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
18
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2006
?
Initial Release of Data Sheet
1
June 2007
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1
?
Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200C to
225C in Capable Plastic Package bullet, p, 1
?
Removed footnote and ?Measured in Functional Test? from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q)
to On Characteristics table, p. 2
?
VDS(on)
Typ and Min values corrected in On Characteristics table, p. 2
?
Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2
?
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
?
Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Fig. 15, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal,
updated to remove IM3 measurement copy from callout in graph, p. 8
?
Updated Fig. 16, Single-Carrier W-CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8
2
Dec. 2008
?
Changed Typical Performance Full Frequency Band to f = 2600 MHz to match Functional Test specification,
p. 1
?
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
?
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 12-14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
?
Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 15-17. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.
?
Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
?
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S27050HSR5 | IC MOSFET RF N-CHAN NI-780S |
| MRF6S27085HSR5 | MOSFET RF N-CHAN 28V 20W NI-780S |
| MRF6S9045NR1 | MOSFET RF N-CH 28V 10W TO-270-2 |
| MRF6S9060NR1 | MOSFET RF N-CH 28V 14W TO-270-2 |
| MRF6S9125MR1 | MOSFET RF N-CH 28V 27W TO-270-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S27015NR1_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27015NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27050HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27050HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27050HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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