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参数资料
| 型号： | MRF6S27015NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/19页 |
| 文件大小： | 629K |
| 描述： | IC MOSFET RF N-CHAN TO270-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.6GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 160mA |
| 功率 - 输出： | 3W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68
Vdc, VGS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28
Vdc, VGS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 40
μAdc)
VGS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 160 mAdc)
VGS(Q)
?
2.8
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
= 28 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 0.4 Adc)
VDS(on)
?
0.27
0.4
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS
= 28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
11.6
?
pF
Output Capacitance
(VDS
= 28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
22.9
?
pF
Functional Tests (3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 160 mA, Pout
= 3 W Avg., f = 2600 MHz, Single-Carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
16
dB
Drain Efficiency
ηD
19
22
?
%
Adjacent Channel Power Ratio
ACPR
?
-45
-42
dBc
Input Return Loss
IRL
?
-18
-9
dB
1. VGG
= 11/10 x V
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S27015NR1_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27015NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27050HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27050HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27050HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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