参数资料
型号: MRF6S27015NR1
厂商: Freescale Semiconductor
文件页数: 15/19页
文件大小: 629K
描述: IC MOSFET RF N-CHAN TO270-2
标准包装: 500
晶体管类型: LDMOS
频率: 2.6GHz
增益: 14dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 160mA
功率 - 输出: 3W
电压 - 额定: 68V
封装/外壳: TO-270AA
供应商设备封装: TO-270-2
包装: 带卷 (TR)
MRF6S27015NR1 MRF6S27015GNR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?25
?5
?10
?15
?20
2660
2680
2700
2500
2520
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout
= 3 Watts Avg.
VDD= 28 Vdc, Pout
= 3 W (Avg.)
IDQ
= 160 mA, Single?Carrier W?CDMA
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
2540
2560
2580
2600
2620
2640
8
16
15
14
13
12
11
10
9
?60
24
23
22
21
20
?30
?40
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
ALT1
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?25
?5
?10
?15
?20
2660
2680
2700
2500
2520
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout
= 6 Watts Avg.
VDD= 28 Vdc, Pout
= 6 W (Avg.)
IDQ
= 160 mA, Single?Carrier W?CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2540
2560
2580
2600
2620
2640
7
15
14
13
12
11
10
9
8
?60
32
31
30
29
28
?30
?40
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
12
16
1
IDQ
= 240 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two?Tone Measurements
80 mA
14
13
10
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?45
?10
1
IDQ
= 80 mA
Pout, OUTPUT POWER (WATTS) PEP
10
?15
?20
?30
?35
?40
?60
?50
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
190 mA
160 mA
130 mA
15
190 mA
130 mA
240 mA
VDD
= 28 Vdc
f1 = 2595 MHz, f2 = 2605 MHz
Two?Tone Measurements
?25
?55
160 mA
相关PDF资料
PDF描述
MRF6S27050HSR5 IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S9045NR1 MOSFET RF N-CH 28V 10W TO-270-2
MRF6S9060NR1 MOSFET RF N-CH 28V 14W TO-270-2
MRF6S9125MR1 MOSFET RF N-CH 28V 27W TO-270-4
相关代理商/技术参数
参数描述
MRF6S27015NR1_07 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S27015NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27050HR3 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27050HR5 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27050HSR3 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ WCDMA NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray