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| 型号： | MRF6S27050HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/12页 |
| 文件大小： | 466K |
| 描述： | IC MOSFET RF N-CHAN NI-780S |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.62GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 7W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF6S27050HR3 MRF6S27050HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
20
0.1
0
64
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 500 mA
f = 2600 MHz
TC
= ?30
C
25C
85C
?30C
25C
85C
10
1
19
18
17
16
15
14
48
40
32
24
16
8
η
D
, DRAIN EFFICIENCY (%)
ηD
Gps
G
ps
, POWER GAIN (dB)
13
56
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
70
14
17
0.3 2010
15
40 6050
16
VDD
= 24 V
28 V
32 V
IDQ
= 500 mA
f = 2600 MHz
30
EVM, ERROR VECTOR MAGNITUDE (%)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
10
1
Pout, OUTPUT POWER (dBm)
35
6
25
20
5
15
4
34 41 4235 36 37 38 39 40
3
VDD= 28 Vdc, IDQ
= 500 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
ηD
η
D
, DRAIN EFFICIENCY (%)
30
2
EVM
Figure 14. MTTF Factor versus Junction Temperature
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 7 W Avg., and
ηD
= 22.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
106
110 130 150 170 190
MTTF (HOURS)
210 230
107
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S27085HR3 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27085HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27085HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27085HR5 | 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S27085HS | 制造商:Freescale Semiconductor 功能描述: |
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