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| 型号： | MRF6V2300NR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/19页 |
| 文件大小： | 1185K |
| 描述： | MOSFET RF N-CH 300W TO-270-4 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 25.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 300W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
MRF6V2300NR1 MRF6V2300NBR1
19
RF Device DataDocument Number: MRF6V2300N
Freescale SemiconductorRev. 5, 4/2010
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相关代理商/技术参数 |
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| MRF6V3090NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V3090NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V3090NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF Series 470 - 860 MHz 90 W 50 V N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6V3090NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V3090NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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