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参数资料
| 型号： | MRF6VP41KHSR7 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 1288K |
| 描述： | MOSFET RF N-CH 1000W NI1230S |
| 标准包装： | 25 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 450MHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
18
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP41KHR6 MRF6VP41KHSR6
REVISION HISTORY (cont.)
Revision
Date
Description
5
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
6
Apr. 2012
?
Table 1, Maximum Ratings, CW Operation: changed
CW rating from an RF based value to a maximum
power dissipated value -- CW Operation @ TC
=25°C, 1107 W changed to Total Device Dissipation @ TC
=
25°C, CW only, 1333 watts. Value change to 1333 watts applies only to devices with a date code of
QQ1218 or newer. Refer to PCN15074, p. 1
?
Table 2, Thermal Characteristics, Thermal Resistance, Junction to Case: 2.4 mil wire configuration thermal
testing resulted in a case temperature change from 48°Cto84°C, p. 2
?
Table 3, ESD Protection Characteristics: added the device?s ESD passing level as applicable to each ESD
class, p. 2
?
Modified figure titles and/or graph axes labels to clarify application use, p. 4--7
?
Fig. 12, Transient Thermal Impedance: graph
updated to show correct CW operation, p. 7
?
Fig. 13, MTTF versus Junction Temperature -- Pulsed removed, p. 7. Refer to the device?s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
?
Fig. 14, MTTF versus Junction Temperature ? CW:
MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7 (renumbered as Fig. 13 after Fig. 13, MTTF versus Junction
Temperature -- Pulsed removed)
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