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参数资料
| 型号： | MRF6VP41KHSR7 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 17/19页 |
| 文件大小： | 1288K |
| 描述： | MOSFET RF N-CH 1000W NI1230S |
| 标准包装： | 25 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 450MHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
MRF6VP41KHR6 MRF6VP41KHSR6
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
45
35
65
20
25_C
TC
=--30_C
85_C
30 4035
25
55
50
Pin, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
P
out
, OUTPUT POWER (dBm)
60
45
40
VDD
=50Vdc
IDQ
= 150 mA
f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
22
1
0
100
100
17
15
13
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D
,
DRAIN EFFICIENCY (%)
ηD
16
14
12
1000 2000
25_C
TC
=--30_C
85_C
20
18
Gps
19
20
21
10
80
90
10
VDD
=50Vdc
IDQ
= 150 mA
f = 450 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
0.18
110
RECTANGULAR PULSE WIDTH (S)
Figure 12. Transient Thermal Impedance
Z
θ
JC
, THERMAL IMPEDANCE (
°
C/W)
0.00001
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.0001 0.001 0.01 0.1
TC
= Case Temperature
ZJC
= Thermal Impedance (from graph)
PD
= Peak Power Dissipation
D=DutyFactor=t1/t2
t1
= Pulse Width; t2
= Pulse Period
TJ
(peak) = PD
*ZθJC
+TC
t2
t1
PD
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature -- CW
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE:
For pulse applications or CW conditions, use the MTTF
calculator referenced above.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
VDD
=50Vdc
Pout
= 1000 W CW
ηD
= 67%
D=0.7
D=0.5
D=0.3
D=0.1
f = 450 MHz
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