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参数资料
| 型号： | MRF6VP41KHSR7 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/19页 |
| 文件大小： | 1288K |
| 描述： | MOSFET RF N-CH 1000W NI1230S |
| 标准包装： | 25 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 450MHz |
| 增益： | 20dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
MRF6VP41KHR6 MRF6VP41KHSR6
17
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software
& Tools tab on the part?s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6VP41KH and MRF6VP41KHS parts will be available for 2 years after release of
MRF6VP41KH and MRF6VP41KHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6VP41KH and MRF6VP41KHS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
?
Initial Release of Data Sheet
1
Apr. 2008
?
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
?
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
?
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
?
Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
Nov. 2008
?
Added CW operation capability bullet to Features section, p. 1
?
Added CW operation to Maximum Ratings table, p. 1
?
Added CW thermal data to Thermal Characteristics table, p. 2
?
Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource
copy to read ?Test circuit
impedance as measured from gate to gate, balanced configuration? and Zload
copy to read ?Test circuit
impedance as measured from drain to drain, balanced configuration?; replaced
impedance diagram to show
push--pull test conditions, p. 7
4
Mar. 2009
?
CW rating limits updated from 1176 W to 1107 W and 5.5 W/°Cto4.6W/°C to reflect recent remeasured
data, Max Ratings table, p. 1
?
CW Thermal Characteristics changed from 81°Cto48°C and 0.16
°C/W to 0.15
°C/W using data from the
most recent 352.2 MHz CW application circuit, p. 2
?
Added Typical Performances table for 352.2 MHz and 500 MHz applications, p. 3
?
Added Fig. 14, MTTF versus Junction Temperature -- CW, p. 7
?
Added Figs. 16 and 18, Test Circuit Component Layout -- 352.2 MHz and 500 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 352.2 MHz and 500 MHz, p. 9, 11
?
Added Figs. 17 and 19, Series Equivalent Source and Load Impedance -- 352.2 MHz and 500 MHz, p. 10, 12
(continued)
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