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参数资料
型号： MRF7S27130HSR3
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 功率晶体管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN
文件页数： 1/12页
文件大小： 407K
代理商： MRF7S27130HSR3
MRF7S27130HR3 MRF7S27130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA,
Pout = 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM 3/4,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — -49 dBc in 0.5 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TC = 25°C
Derate above 25°C
CW
150
0.83
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
RθJC
0.32
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S27130H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRF7S27130HR3
MRF7S27130HSR3
2500 -2700 MHz, 23 W AVG., 28 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S27130HR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S27130HSR3
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
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相关代理商/技术参数
参数描述
MRF7S27130HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3_11 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF7S35015HSR5 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35120HSR3 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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