- 您现在的位置：买卖IC网 > PDF目录98040 > MRF7S27130HSR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF7S27130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件页数： | 12/12页 |
| 文件大小： | 407K |
| 代理商： | MRF7S27130HSR3 |
MRF7S27130HR3 MRF7S27130HSR3
9
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
f = 2500 MHz
Zsource
f = 2700 MHz
f = 2500 MHz
VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg.
f
MHz
Zsource
W
Zload
W
2500
4.499 - j2.335
2.936 - j4.876
2525
4.382 - j1.944
2.885 - j4.666
2550
4.294 - j1.567
2.838 - j4.467
2575
4.234 - j1.194
2.797 - j4.273
2600
4.209 - j0.820
2.763 - j4.084
2625
4.219 - j0.447
2.733 - j3.903
2650
4.248 - j0.090
2.706 - j3.732
2675
4.304 + j0.261
2.678 - j3.570
2700
4.390 + j0.612
2.652 - j3.410
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料 |
PDF描述 |
|---|---|
| MRF7S35015HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S38010HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S38040HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S38040HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S38075HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S27130HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。