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参数资料
| 型号： | MRF7S27130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 407K |
| 代理商： | MRF7S27130HSR3 |
MRF7S27130HR3 MRF7S27130HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
80
20
1
40
50
10
30
7th Order
5th Order
3rd Order
200
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
IM3U
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
40
IM3L
IM5U
IM5L
IM7L
IM7U
15
50
65
45
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
55
50
45
20
100
35
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ACPR
(dBc)
ηD
40
25
Gps
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
TwoTone Measurements, 10 MHz Tone Spacing
VDD = 28 Vdc, Pout = 105 W (PEP), IDQ = 1500 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
300
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1500 mA
f = 2600 MHz
TC = 30_C
30
_C
10
1
18
17
16
50
40
30
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
50
13
18
025
15
16
17
IDQ = 1500 mA
f = 2600 MHz
200
VDD = 24 V
28 V
0
110
40
35
30
25
20
25
_C
85
_C
32 V
5
TC = 30_C
VDD = 28 Vdc, IDQ = 1500 mA
f = 2600 MHz, 802.16d, 64 QAM 3
/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
25
_C
30
_C
85
_C
75
100
60
85
_C
25
_C
30
_C
25
_C
85
_C
15
14
20
10
25
_C
85
_C
14
175
60
70
100
10
125
150
100
30
15
10
300
10
55
60
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S27130HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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