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参数资料
| 型号： | MRF7S27130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 407K |
| 代理商： | MRF7S27130HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
2500
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
9
5
7
8
17
18
50
25
23
22
47
48
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
17.4
17.3
17.2
2525
2550
2575
2600
2700
20
49
10
IRL
Gps
ηD
2625
2650
2675
ACPR
17.1
46
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
17.6
17.5
17.7
17.8
17.9
21
24
6
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
2500
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 43 Watts Avg.
9
5
7
8
16.7
17.7
40
33
31
30
37
38
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
17.4
17.3
16.9
2525
2550
2575
2600
2700
28
39
10
IRL
Gps
ηD
2625
2650
2675
ACPR
16.8
36
VDD = 28 Vdc, Pout = 43 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
17.6
17.5
29
32
6
Figure 5. Two-Tone Power Gain versus
Output Power
14
19
1
IDQ = 2250 mA
Pout, OUTPUT POWER (WATTS) PEP
1000 mA
18
16
10
100
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
TwoTone Measurements, 10 MHz Tone Spacing
17
15
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
40
60
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
100
10
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
TwoTone Measurements, 10 MHz Tone Spacing
17.2
17.1
17
500
2000 mA
1500 mA
1200 mA
50
200
IDQ = 2250 mA
1000 mA
2000 mA
1500 mA
1200 mA
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相关代理商/技术参数 |
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|---|---|
| MRF7S27130HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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