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| 型号： | MRF7S27130HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 771K |
| 描述： | MOSFET RF N-CH 23W NI-780S |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.5GHz |
| 增益： | 16.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.5A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF7S27130HR3 MRF7S27130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
?
Typical WiMAX Performance: VDD
=28Volts,IDQ
= 1500 mA,
Pout
= 23 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM
3/4, 4 bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain ? 16.5 dB
Drain Efficiency ? 20%
Device Output Signal PAR ? 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset ? --49 dBc in 0.5 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
150
0.83
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
RθJC
0.32
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF7S27130H
Rev. 2, 3/2011
Freescale Semiconductor
Technical Data
MRF7S27130HR3
MRF7S27130HSR3
2500--2700 MHz, 23 W AVG., 28 V
WiMAX
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF7S27130HR3
CASE 465A--06, STYLE 1
NI--780S
MRF7S27130HSR3
?
Freescale Semiconductor, Inc., 2007--2008, 2011.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S35015HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35015HSR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF7S35015HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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