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参数资料
| 型号： | MRF8HP21130HSR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 13/14页 |
| 文件大小： | 562K |
| 代理商： | MRF8HP21130HSR5 |
8
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
VDD =28 Vdc,VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
3.10 -- j7.30
5.40 + j0.50
51.4
138
55.8
52.2
166
56.9
2140
3.77 -- j7.80
5.00 + j1.80
51.2
132
54.4
52.0
158
56.7
2170
4.30 -- j8.50
4.30 + j1.50
51.2
132
54.1
52.0
158
55.2
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zload (1)
()
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
3.10 -- j7.30
4.80 -- j5.20
49.1
81
67.2
51.0
126
68.2
2140
3.77 -- j7.80
6.50 -- j4.80
49.0
79
66.6
49.9
98
67.5
2170
4.30 -- j8.50
6.90 -- j4.90
48.8
76
66.7
49.9
98
67.4
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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