- 您现在的位置：买卖IC网 > PDF目录98040 > MRF8HP21130HSR5 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF8HP21130HSR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 562K |
| 代理商： | MRF8HP21130HSR5 |
MRF8HP21130HR3 MRF8HP21130HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQB = 360 mA, VGSA =0.4 Vdc,
2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
130 (2)
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
166 (2)
—
W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
18
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =28 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.011
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C) (2)
P1dB
—
0.012
—
dB/°C
1. Measurement made with device in a Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF8P20140WHR3 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8P20140WHR5 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8P20140WHSR5 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8P20160HSR3 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8P20160HR3 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P18265HR5 | 功能描述:射频MOSFET电源晶体管 HV8 260W DOHERT NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P18265HR6 | 功能描述:射频MOSFET电源晶体管 65V N-CH 1840MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P18265HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 260WDOHERTY NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P18265HSR6 | 功能描述:射频MOSFET电源晶体管 65V N-CH 1840MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。