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| 型号： | MRF8P18265HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 610K |
| 描述： | FET RF N-CH 1840MHZ 30V NI1230-8 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.88GHz |
| 增益： | 16dB |
| 电压 - 测试： | 30V |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 72W |
| 电压 - 额定： | 65V |
| 封装/外壳： | SOT-1110A |
| 供应商设备封装： | NI1230-8 |
| 包装： | 带卷 (TR) |
MRF8P18265HR6 MRF8P18265HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
?
Typical Doherty Single--Carrier W--CDMA Performance: VDD
=30Volts,
IDQA
= 800 mA, VGSB
=1.3V,Pout
= 72 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
15.9
44.8
6.9
--31.7
1840 MHz
16.1
43.4
7.0
--31.7
1880 MHz
16.0
43.7
6.7
--32.2
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
?
Typical Pout
@ 3 dB Compression Point
?
280 Watts CW
Features
?
Production Tested in a Symmetrical Doherty Configuration
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Designed for Digital Predistortion Error Correction Systems
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
446
4.5
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74°C, 72.5 W CW, 30 Vdc, IDQA
= 800 mA, VGSB
= 1.3 V, 1880 MHz
(4),30Vdc,IDQA
= 800 mA, VGSB
= 1.3 V, 1880 MHz
Case Temperature 90°C, 260 W CW
RθJC
0.27
0.25
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See
CW operation data in Maximum Ratings table.
Document Number: MRF8P18265H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
1805--1880 MHz, 72 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P18265HR6
MRF8P18265HSR6
CASE 375I--04
NI--1230--8
MRF8P18265HR6
CASE 375J--03
NI--1230S--8
MRF8P18265HSR6
(Top View)
27RFoutA/VDSA
Figure 1. Pin Connections
36RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
18VBWA
N.C.
N.C.
45VBWB
?
Freescale Semiconductor, Inc., 2010, 2012.
All rights reserved.
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| MRF8P20100HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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