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参数资料
| 型号： | MRF8P9300HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 837K |
| 描述： | FET RF N-CH 960MHZ 70V NI-1230H |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 960MHz |
| 增益： | 19.4db |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 2.4A |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF8P9300HR6 MRF8P9300HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
2400 mA, Pout
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.6
35.4
6.0
--37.3
940 MHz
19.6
35.6
6.0
--37.1
960 MHz
19.4
35.8
5.9
--36.7
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
?
Typical Pout
@ 1 dB Compression Point
?
326 Watts CW
880 MHz
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
2400 mA, Pout
= 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
20.5
35.2
6.0
--36.1
880 MHz
20.7
36.0
6.0
--36.1
895 MHz
20.6
37.0
6.0
--35.8
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Designed for Digital Predistortion Error Correction Systems
?
Optimized for Doherty Applications
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
Freescale Semiconductor
Technical Data
920--960 MHz, 100 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P9300HR6
MRF8P9300HSR6
CASE 375D--05, STYLE 1
NI--1230
MRF8P9300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P9300HSR6
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
Figure 1. Pin Connections
?
Freescale Semiconductor, Inc., 2009--2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P9300HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8P9300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P9300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HR3 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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