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参数资料
| 型号： | MRF8P9300HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/18页 |
| 文件大小： | 837K |
| 描述： | FET RF N-CH 960MHZ 70V NI-1230H |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 960MHz |
| 增益： | 19.4db |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 2.4A |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW, 28 Vdc, IDQ
= 2400 mA
Case Temperature 80°C, 300 W CW, 28 Vdc, IDQ
= 2400 mA
RθJC
0.22
0.20
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(VDS
=70Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(3)
(VDS
=10Vdc,ID
= 400
μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,IDQ
= 2400 mA, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(3)
(VGS
=10Vdc,ID
=3Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 2400 mA, Pout
= 100 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
18.0
19.4
21.0
dB
Drain Efficiency
ηD
32.0
35.8
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.6
5.9
?
dB
Adjacent Channel Power Ratio
ACPR
?
--36.7
--34.0
dBc
Input Return Loss
IRL
?
-- 1 6
-- 1 0
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 2400 mA, Pout
= 100 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
19.6
35.4
6.0
--37.3
-- 9
940 MHz
19.6
35.6
6.0
--37.1
-- 1 2
960 MHz
19.4
35.8
5.9
--36.7
-- 1 6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
(continued)
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