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参数资料
| 型号： | MRF9045M |
| 厂商： | Motorola, Inc. |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 该射频亚微米MOSFET的线射频功率场效应晶体管N沟道增强型MOSFET的侧向 |
| 文件页数： | 1/8页 |
| 文件大小： | 153K |
| 代理商： | MRF9045M |
1
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance
Parameters
Moisture Sensitivity Level 3
RF Power Plastic Surface Mount Package
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
156(1)
1.25(1)
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
150
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Typical)
Machine Model
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.8(1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°
C/W
(1) Simulated
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9045M/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
REV 0
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PDF描述 |
|---|---|
| MRF9060MBR1 | The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs |
| MRF9060MR1 | The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs |
| MRF9080LSR3 | RF POWER FIELD EFFECT TRANSISTORS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9045MBR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MR1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF9045NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9045NR1 | 功能描述:射频MOSFET电源晶体管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
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