参数资料
型号: MRF9045M
厂商: Motorola, Inc.
英文描述: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: 该射频亚微米MOSFET的线射频功率场效应晶体管N沟道增强型MOSFET的侧向
文件页数: 4/8页
文件大小: 153K
代理商: MRF9045M
MRF9045M MRF9045MR1
4
MOTOROLA RF DEVICE DATA
Figure 1. 945 MHz Broadband Test Circuit Schematic
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
0.14
x 0.32
0.47
x 0.32
0.16
x 0.32
x 0.62
Tapered
0.18
x 0.62
0.56
x 0.62
0.33
x 0.32
0.14
x 0.32
0.36
x 0.08
1.01
x 0.08
0.15
x 0.08
0.29
x 0.08
B1, B2
C1, C7, C13, C14
C2, C8
C3
C4, C5, C8, C9
C6
C10
C11
C12
C17
L1, L2
Z1
Z2
Short Ferrite Beads, Surface Mount
47 pF, Chip Capacitors, B Case
2.7 pF, Chip Capacitors, B Case
3.9 pF, Chip Capacitor, B Case
10 pF, Chip Capacitors, B Case
10
μ
F, 35 V Tantalum Surface Mount Capacitor
2.2 pF, Chip Capacitor, B Case
4.7 pF, Chip Capacitor, B Case
1.2 pF, Chip Capacitor, B Case
220
μ
F, 50 V Electrolytic Capacitor
12.5 nH, Inductors
0.20
x 0.08
0.57
x 0.12
B1
C1
RF
INPUT
RF
OUTPUT
Z13
VGG
VDD
C6
L1
Z5
Z4
Z3
C2
Z2
Z1
Z7
C8
C9
Z8
Z9
Z10
C13
C14
B2
C15
C16
C17
C4
C5
Z6
+
+
C7
+
+
C12
C10
C3
Z11
Z12
DUT
C11
L2
Figure 2. 945 MHz Broadband Test Circuit Components Layout
C
MRF9045M
Ground
C1
C2
C3
C4
C5
W
C6
C7
C8
C9
C10 C11
C12 C13
C14
L2
C15 C16
L1
A1
A2
B1
B2
W
Ground
Vbias
Vsupply
C17
相关PDF资料
PDF描述
MRF9060MBR1 The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MRF9060MR1 The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MRF9080LSR3 RF POWER FIELD EFFECT TRANSISTORS
MRF9080SR3 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
MRF9080R3 RF POWER FIELD EFFECT TRANSISTORS
相关代理商/技术参数
参数描述
MRF9045MBR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
MRF9045NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9045NR1 功能描述:射频MOSFET电源晶体管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET