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参数资料
| 型号： | MRF9045M |
| 厂商： | Motorola, Inc. |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 该射频亚微米MOSFET的线射频功率场效应晶体管N沟道增强型MOSFET的侧向 |
| 文件页数： | 7/8页 |
| 文件大小： | 153K |
| 代理商： | MRF9045M |
7
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
(TO–270)
CASE 1265–06
ISSUE E
DATUM
BOTTOM VIEW
A
E4
E
D
E1
D2
A
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
a
D
A
M
a
D
2
b
2
D
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M–1994.
3. DATUMPLANE –H– IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
“
D1” AND
“
E1” DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“
D1” AND
“
E1” DO
INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUMPLANE –H–.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUMMATERIAL
CONDITION.
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUMPLANE –H–.
7. DIMENSION A2 APPLIES WITHIN ZONE
“
J” ONLY.
N
c
F
ZONE J
E2
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
F
b1
c1
aaa
MIN
.076
.038
.040
.416
.376
.290
.016
.436
.236
.066
.150
.058
.025 BSC
MAX
.084
.044
.042
.424
.384
.320
.024
.444
.244
.074
.180
.066
MIN
1.93
0.96
1.02
10.57
9.55
7.37
0.41
11.07
5.99
1.68
3.81
1.47
MAX
2.13
1.12
1.07
10.77
9.75
8.13
0.61
11.28
6.20
1.88
4.57
1.68
MILLIMETERS
INCHES
.193
.007
.199
.011
4.90
0.18
5.06
0.28
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9045MBR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MR1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF9045NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9045NR1 | 功能描述:射频MOSFET电源晶体管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
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