参数资料
型号: MRF9045M
厂商: Motorola, Inc.
英文描述: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: 该射频亚微米MOSFET的线射频功率场效应晶体管N沟道增强型MOSFET的侧向
文件页数: 2/8页
文件大小: 153K
代理商: MRF9045M
MRF9045M MRF9045MR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
1
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150
μ
Adc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
3.7
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
4
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
74
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
39
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
1.9
pF
(continued)
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