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参数资料
| 型号： | MRF9045M |
| 厂商： | Motorola, Inc. |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 该射频亚微米MOSFET的线射频功率场效应晶体管N沟道增强型MOSFET的侧向 |
| 文件页数： | 5/8页 |
| 文件大小： | 153K |
| 代理商： | MRF9045M |
5
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
–60
–55
–50
–45
–40
–35
–30
–25
0.5
1
10
100
5
10
15
20
25
30
35
40
45
50
900
920
940
960
980
1000
–35
–25
–15
–5
0
10
20
30
40
50
60
0.5
1
10
100
G
,
Figure 3. Class AB Test Circuit Performance
Figure 4. Power Gain, Efficiency and IRL versus
Output Power
Figure 5. Intermodulation Distortion versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
I
I
IDQ = 500 mA
Gps
IMD3
IRL
VDD = 28 Vdc
Pout = 45 Watts (PEP)
IDQ = 350 mA
Two–Tone Measurement
100 kHz Tone Spacing
,
f, FREQUENCY (MHz)
–60
–50
–40
–30
–20
–10
0
VDD = 28 Vdc
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
IDQ = 350 mA
IDQ = 200 mA
G
,
I
,
I
–70
–65
–60
–55
–50
–45
–40
–35
–30
–25
–20
1
10
100
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
I
3rd Order
5th Order
7th Order
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
22
24
26
28
30
32
5
0.5
10
15
20
1
10
100
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS CW)
Figure 7. CW Power Gain and Drain Efficiency
versus Output Power
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Output Voltage versus Supply Voltage
G
,
P
Pin = 0.3 W
Pin = 0.6 W
Pin = 1 W
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Gps
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
Gps
IRL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9045MBR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9045MR1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF9045NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9045NR1 | 功能描述:射频MOSFET电源晶体管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
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