- 您现在的位置：买卖IC网 > PDF目录184554 > MRF9045R1 (MOTOROLA INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF9045R1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360, CASE 360B-05, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 346K |
| 代理商： | MRF9045R1 |
MRF9045R1 MRF9045LSR1
5–180
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
28 volt base station equipment.
Typical Two–Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — –32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
MRF9045R1
Derate above 25
°C
MRF9045LSR1
PD
125
0.71
175
1
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9045R1
MRF9045LSR1
RθJC
1.4
1.0
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9045R1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9045R1
CASE 360C–05, STYLE 1
NI–360S
MRF9045LSR1
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MRF9120R3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFG35010ANT1 | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010AR1 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010MT1 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010R5 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF904SNR1 | 制造商:Freescale Semiconductor 功能描述: |
| MRF905 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| MRF9060 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF9060LR1 | 功能描述:射频MOSFET电源晶体管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。