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| 型号： | MRF9060LR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 365K |
| 描述： | IC MOSFET RF N-CHAN NI-360 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 945MHz |
| 增益： | 17dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 70W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-360 |
| 供应商设备封装： | NI-360 |
| 包装： | 带卷 (TR) |
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MRF9060LR1 MRF9060LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
?
Typical Two-Tone Performance at 945 MHz, 26 Volts
Output Power ? 60 Watts PEP
Power Gain ? 17 dB
Efficiency ? 40%
IMD ? -31 dBc
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C MRF9060LR1
Derate above 25°C
MRF9060LSR1
PD
159
0.91
219
1.25
W
W/°C
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case MRF9060LR1
MRF9060LSR1
RθJC
1.1
0.8
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Document Number: MRF9060
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF9060LR1
CASE 360C-05, STYLE 1
NI-360S
MRF9060LSR1
?
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9060LR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LR5 | 功能描述:射频MOSFET电源晶体管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9060LSR1 | 功能描述:射频MOSFET电源晶体管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9060LSR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LSR5 | 功能描述:射频MOSFET电源晶体管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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