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参数资料
| 型号： | MRFE6VP8600HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 15/20页 |
| 文件大小： | 777K |
| 代理商： | MRFE6VP8600HR5 |
4
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM)
MRFE6VP8600H
Rev. 1
CUT
OUT
A
REA
C1 C2
L1
R1
COAX1
COAX2
C4
C3
C5
C6
L2
C7
C8*
C9
C10
L3
R2
C24
C25
C26
COAX3
COAX4
C14*
C15*
C16*
C17*
C18*
C22
C21 C20
C19
C23*
C11
C12
C13
*C8, C14, C15, C16, C17, C18 and C23 are mounted vertically.
Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM)
Part
Description
Part Number
Manufacturer
C1, C9
10
μF, 50 V, Chip Capacitors
GRM55DR61H106KA88L
Murata
C2, C10
2.2
μF, 50 V, Chip Capacitors
C3225X7R1H225K
TDK
C3, C4, C20, C21, C23
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C5, C6
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C7
0.8--8.0 pF Variable Capacitor
27291SL
Johanson Components
C8
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C11, C24
2.2
μF, 100 V, Chip Capacitors
C3225X7R2A225KT
TDK
C12, C25
4.7
μF, 100 V, Chip Capacitors
GRM55ER72A475KA01B
Murata
C13, C26
470
μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C14
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C15
3.0 pF Chip Capacitor
ATC100B3R0CT500XT
ATC
C16
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C17
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C18
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C19, C22
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
Coax1, 2, 3, 4
25
SemiRigid Coax, Length 2.0”
UT--141C--25
Micro--Coax
L1, L3
5.0 nH, 2 Turn Inductors
A02TKLC
Coilcraft
L2
2.5 nH, 1 Turn Inductor
A01TKLC
Coilcraft
R1, R2
10
, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
0.030
″, εr =3.5
RO4350B
Rogers
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相关代理商/技术参数 |
参数描述 |
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| MRFE6VP8600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25LR5 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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