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参数资料
| 型号： | MRFE6VP8600HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 16/20页 |
| 文件大小： | 777K |
| 代理商： | MRFE6VP8600HR5 |
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
5
RF Device Data
Freescale Semiconductor
Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB--T (8k OFDM)
RF
INPUT Z1
DUT
Z44
C7
Z23 Z25
COAX1
COAX2
Z37
C1
Z38
Z26
C18
Z24
C2
Z21
Z22
VBIAS
VSUPPLY
C12
C13
+
Z2
Z5
Z6
C5
C6
Z7
Z8
C8
Z9
Z10
R1
Z18
R2
C9
C10
VBIAS
Z13
Z14
Z46
VSUPPLY
C26
+
RF
OUTPUT
Z42
COAX3
COAX4
Z43
L2
Z11
Z12
Z17
L3
Z20
Z15
Z16
L1
Z19
C19
C22
Z40
C21
C20
Z39
C11
C25
Z47
Z45
C24
C23
Z41
Z35
Z36
Z33
Z34
C17
Z31
Z32
C16
Z29
Z30
C15
Z27
Z28
C14
C4
Z4
C3
Z3
Z1
0.204
″ x 0.062″ Microstrip
Z2
0.245
″ x 0.080″ Microstrip
Z3, Z4
0.445
″ x 0.060″ Microstrip
Z5, Z6
0.019
″ x 0.100″ Microstrip
Z7, Z8
0.415
″ x 0.400″ Microstrip
Z9, Z10
0.083
″ x 0.400″ Microstrip
Z11, Z12
0.022
″ x 0.400″ Microstrip
Z13, Z14
0.208
″ x 0.850″ Microstrip
Z15, Z16
0.242
″ x 0.960″ Microstrip
Z17, Z18
0.780
″ x 0.080″ Microstrip
Z19*, Z20*
0.354
″ x 0.080″ Microstrip
Z21, Z22
0.164
″ x 0.520″ Microstrip
Z23, Z24
0.186
″ x 0.520″ Microstrip
Z25, Z26
0.088
″ x 0.420″ Microstrip
Z27, Z28
0.072
″ x 0.420″ Microstrip
Z29, Z30
0.072
″ x 0.420″ Microstrip
Z31, Z32
0.259
″ x 0.420″ Microstrip
Z33, Z34
0.075
″ x 0.420″ Microstrip
Z35, Z36
0.052
″ x 0.420″ Microstrip
Z37, Z38
0.211
″ x 0.100″ Microstrip
Z39, Z40
0.389
″ x 0.060″ Microstrip
Z41
0.070
″ x 0.080″ Microstrip
Z42
0.018
″ x 0.080″ Microstrip
Z43
0.204
″ x 0.062″ Microstrip
Z44*, Z45*
0.850
″ x 0.080″ Microstrip
Z46, Z47
0.250
″ x 0.080″ Microstrip
* Line length includes microstrip bends
相关PDF资料 |
PDF描述 |
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| MRFE6VP8600HR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFG35002N6AT1 | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35002N6T1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MRFG35003MT1 | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MRFG35005ANT1 | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP8600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25LR5 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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