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参数资料
型号： MRFE6VP8600HR5
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 功率晶体管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件页数： 2/20页
文件大小： 777K
代理商： MRFE6VP8600HR5
10
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
470--860 MHz REFERENCE CIRCUIT
Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470--860 MHz
Part
Description
Part Number
Manufacturer
C1, C13
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C2, C14
2.2
μF, 50 V Chip Capacitors
C3225X7R1H225K
TDK
C3, C15
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C4, C5
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C6, C7
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C8, C10
0.8--8.0 pF Variable Capacitors
27291SL
Johanson Components
C9, C28
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C11, C12
6.8 pF Chip Capacitors
ATC800B6R8BT500XT
ATC
C16, C37
39,000 pF Chip Capacitors
ATC200B393KT50XT
ATC
C17, C38
2.2
μF, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C18, C39
4.7
μF, 100 V Chip Capacitors
GRM55ER72A475KA01B
Murata
C19, C40
220
μF, 100 V Electrolytic Capacitors
EEV--FK2A221M
Panasonic--ECG
C20, C36
56 pF Chip Capacitors
ATC100B560CT500XT
ATC
C21, C25, C29
7.5 pF Chip Capacitors
ATC800B7R5CT500XT
ATC
C22, C30
8.2 pF Chip Capacitors
ATC800B8R2CT500XT
ATC
C23
13 pF Chip Capacitor
ATC800B130JT500XT
ATC
C24
9.1 pF Chip Capacitor
ATC800B9R1CT500XT
ATC
C26
3.3 pF Chip Capacitor
ATC800B3R3CT500XT
ATC
C27
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C31, C35
1,000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C32, C33, C34
120 pF Chip Capacitors
ATC100B121JT500XT
ATC
L1, L2
5.0 nH, 2 Turn Inductors
A02TKLC
Coilcraft
R1, R2
10
, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
Coax1, 2, 3, 4
25
SemiRigid Coax, Length 2.0″
UT--141C--25
Micro--Coax
Q1
RF Power LDMOS Transistor
MRFE6VP8600HR6
Freescale
PCB
0.030
″, εr =3.5
RO4350B
Rogers
Table 7. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Microstrips — 470--860 MHz
Microstrip
Description
Z1
0.204
″ x 0.062″ Microstrip
Z2
0.245
″ x 0.080″ Microstrip
Z3, Z4
0.445
″ x 0.060″ Microstrip
Z5, Z6
0.019
″ x 0.100″ Microstrip
Z7, Z8
0.305
″ x 0.400″ Microstrip
Z9, Z10
0.083
″ x 0.400″ Microstrip
Z11, Z12
0.095
″ x 0.400″ Microstrip
Z13, Z14
0.055
″ x 0.850″ Microstrip
Z15, Z16
0.083
″ x 0.850″ Microstrip
Z17, Z18
0.071
″ x 0.850″ Microstrip
Z19, Z20
0.187
″ x 0.960″ Microstrip
Z21, Z22
0.055
″ x 0.960″ Microstrip
Z23, Z24
0.780
″ x 0.080″ Microstrip
Z25*, Z26*
0.354
″ x 0.080″ Microstrip
Z27, Z28
0.164
″ x 0.520″ Microstrip
Z29, Z30
0.074
″ x 0.520″ Microstrip
Z31, Z32
0.075
″ x 0.520″ Microstrip
Microstrip
Description
Z33, Z34
0.038
″ x 0.520″ Microstrip
Z35, Z36
0.170
″ x 0.420″ Microstrip
Z37, Z38
0.269
″ x 0.420″ Microstrip
Z39, Z40
0.069
″ x 0.420″ Microstrip
Z41, Z42
0.075
″ x 0.420″ Microstrip
Z43, Z44
0.038
″ x 0.420″ Microstrip
Z45, Z46
0.038
″ x 0.100″ Microstrip
Z47, Z48
0.075
″ x 0.100″ Microstrip
Z49, Z50
0.169
″ x 0.100″ Microstrip
Z51, Z52
0.389
″ x 0.060″ Microstrip
Z53
0.070
″ x 0.080″ Microstrip
Z54
0.018
″ x 0.080″ Microstrip
Z55
0.204
″ x 0.062″ Microstrip
Z56, Z57
0.278
″ x 0.080″ Microstrip
Z58*, Z59*
0.886
″ x 0.080″ Microstrip
* Line length includes microstrip bends
相关PDF资料
PDF描述
MRFE6VP8600HR6 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFG35002N6AT1 C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
MRFG35002N6T1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MRFG35003MT1 S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MRFG35005ANT1 C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
相关代理商/技术参数
参数描述
MRFE6VP8600HR6 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HSR5 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HSR6 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25GNR1 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25LR5 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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