参数资料
型号: MSC1210Y4PAGR
厂商: TEXAS INSTRUMENTS INC
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 33 MHz, MICROCONTROLLER, PQFP64
封装: GREEN, PLASTIC, TQFP-64
文件页数: 24/94页
文件大小: 913K
代理商: MSC1210Y4PAGR
MSC1210
SBAS203J MARCH 2002 REVISED JANUARY 2008
www.ti.com
30
The MSC1210 allows the user to partition the Flash
Memory between Program Memory and Data Memory. For
instance, the MSC1210Y5 contains 32kB of Flash
Memory on-chip. Through the HW configuration registers,
the user can define the partition between Program
Memory (PM) and Data Memory (DM), as shown in Table 3
and Table 4. The MSC1210 family offers four memory
configurations, as shown.
Table 3. MSC1210 Flash Partitioning
HCR0
MSC1210Y2
MSC1210Y3
MSC1210Y4
MSC1210Y5
DFSEL
PM
DM
PM
DM
PM
DM
PM
DM
000
0kB
4kB
0kB
8kB
0kB
16kB
0kB
32kB
001
0kB
4kB
0kB
8kB
0kB
16kB
0kB
32kB
010
0kB
4kB
0kB
8kB
0kB
16kB
011
0kB
4kB
0kB
8kB
24kB
8kB
100
0kB
4kB
12kB
4kB
28kB
4kB
101
2kB
6kB
2kB
14kB
2kB
30kB
2kB
110
3kB
1kB
7kB
1kB
15kB
1kB
31kB
1kB
111
(default)
4kB
0kB
8kB
0kB
16kB
0kB
32kB
0kB
NOTE: When a 0kB program memory configuration is selected, program
execution is external.
Table 4. MSC1210 Flash Memory Partitioning
HCR0
MSC1210Y2
MSC1210Y3
MSC1210Y4
MSC1210Y5
DFSEL
PM
DM
PM
DM
PM
DM
PM
DM
000
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000
0400-
83FF
001
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000
0400-
83FF
010
0000
0400-
13FF
0000
0400-
23FF
0000
0400-
43FF
0000-
3FFF
0400-
43FF
011
0000
0400-
13FF
0000
0400-
23FF
0000-
1FFF
0400-
23FF
0000-
5FFF
0400-
23FF
100
0000
0400-
13FF
0000-
0FFF
0400-
13FF
0000-
2FFF
0400-
13FF
0000-
6FFF
0400-
13FF
101
0000-
07FF
0400-
0BFF
0000-
17FF
0400-
0BFF
0000-
37FF
0400-
0BFF
0000-
77FF
0400-
0BFF
110
0000-
0BFF
0400-
07FF
0000-
1BFF
0400-
07FF
0000-
3BFF
0400-
07FF
0000-
7BFF
0400-
07FF
111
(default)
0000-
0FFF
0000
0000-
1FFF
0000
0000-
3FFF
0000
0000-
7FFF
0000
NOTE: Program memory accesses above the highest listed address will
access external program memory.
It is important to note that the Flash Memory is readable
and writable by the user through the MOVX instruction
when configured as either Program or Data Memory (via
the MXWS bit in the MWS, SFR 8Fh). This means that the
user may partition the device for maximum Flash Program
Memory size (no Flash Data Memory) and use Flash
Program Memory as Flash Data Memory. This may lead to
undesirable behavior if the PC points to an area of Flash
Program Memory that is being used for data storage.
Therefore, it is recommended to use Flash partitioning
when Flash Memory is used for data storage. Flash
partitioning prohibits execution of code from Data Flash
Memory. Additionally, the Program Memory erase/write
can be disabled through hardware configuration bits
(HCR0), while still providing access (read/write/erase) to
Data Flash Memory.
The effect of memory mapping on Program and Data
Memory is straightforward. The Program Memory is
decreased in size from the top of internal Program
Memory. Therefore, if the MSC1210Y5 is partitioned with
31kB of Flash Program Memory and 1kB of Flash Data
Memory, external Program Memory execution will begin at
7C00h (versus 8000h for 32kB). The Flash Data Memory
is added on top of the SRAM memory. Therefore, access
to Data Memory (through MOVX) will access SRAM for
addresses 0000h03FFh and access Flash Memory for
addresses 0400h07FFh.
Data Memory
The MSC1210 can address 64kB of Data Memory. The
MOVX instruction is used to access the Data SRAM
Memory. This includes 1,024 bytes of on-chip Data SRAM
Memory. The data bus values do not appear on Port 0
(during data bus timing) for internal memory access.
The MSC1210 also has on-chip Flash Data Memory which
is readable and writable (depending on Memory Write
Select register) during normal operation (full VDD range).
This memory is mapped into the external Data Memory
space directly above the SRAM.
The MOVX instruction is used to write the flash memory.
Flash memory must be erased before it can be written.
Flash memory is erased in 128 byte pages.
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