参数资料
型号: MSC81035M
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.280 INCH, PLASTIC, SO68, IMPAC-2
文件页数: 1/4页
文件大小: 101K
代理商: MSC81035M
September 2, 1994
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 2LFL (S068)
epoxy sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 35 W MIN. WITH 10.7 dB GAIN
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPAC
package with internal input matching.
PIN CONNECTION
BRANDING
81035M
ORDER CODE
MSC81035M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
150
W
IC
Device Current*
3.0
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
1.0
°C/W
*Applies only to rated RF amplifier operation
Note:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
MSC81035M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
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