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参数资料
| 型号： | MSC81035MP |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.280 INCH, PLASTIC, S051, IMPAC-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 101K |
| 代理商： | MSC81035MP |
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (S051)
epoxy sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.∞
:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 35 W MIN. WITH 10.7 dB GAIN
DESCRIPTION
The MSC81035MP is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035MP. MSC81035MP of-
fers improved saturated ouput power and collector
efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC81035MP is housed in the IMPACpack-
age with internal input matching.
PIN CONNECTION
BRANDING
81035MP
ORDER CODE
MSC81035MP
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
150
W
IC
Device Current*
3.0
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +150
°C
RTH(j-c)
Junction-Case Thermal Resistance*
1.0
°C/W
*Applies only to rated RF amplifier operation
Note:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
MSC81035MP
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
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