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参数资料
| 型号： | MT16JSF25664HY-80BXX |
| 元件分类： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, ZMA204 |
| 封装： | LEAD FREE, MO-268, SODIMM-204 |
| 文件页数： | 12/20页 |
| 文件大小： | 651K |
| 代理商： | MT16JSF25664HY-80BXX |
PDF: 09005aef83021ee3/Source: 09005aef83021f5a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF16C256x64H.fm - Rev. B 6/09 EN
2
2008 Micron Technology, Inc. All rights reserved
2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
Features
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT16JSF25664HY-1G1D1.
Table 2:
Addressing
Parameter
2GB
Refresh count
8K
Row address
16K (A[13:0])
Device bank address
8 (BA[2:0])
Device configuration
1Gb (128 Meg x 8)
Column address
1K (A[9:0])
Module rank address
2 (S0#, S1#)
Table 3:
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT41J128M8,1 1Gb DDR3 SDRAM
Part Number2
Module
Density
Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-tRCD-tRP)
MT16JSF25664H(I)Y-1G5__
2GB
256 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
8-8-8
MT16JSF25664H(I)Y-1G4__
2GB
256 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
9-9-9
MT16JSF25664H(I)Y-1G3__
2GB
256 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
10-10-10
MT16JSF25664H(I)Y-1G1__
2GB
256 Meg x 64
8.5 GB/s
1.87ns/1066 MT/s
7-7-7
MT16JSF25664H(I)Y-1G0__
2GB
256 Meg x 64
8.5 GB/s
1.87ns/1066 MT/s
8-8-8
MT16JSF25664H(I)Y-80C__
2GB
256 Meg x 64
6.4 GB/s
2.5ns/800 MT/s
5-5-5
MT16JSF25664H(I)Y-80B__
2GB
256 Meg x 64
6.4 GB/s
2.5ns/800 MT/s
6-6-6
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PDF描述 |
|---|---|
| MT16LSDT12864AG-133XX | 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| MT18VDVF6472DG-262XX | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| MT18VDVF6472DG-265XX | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| MT2S3216D-20 | 32K X 16 MULTI DEVICE SRAM MODULE, 20 ns, DMA40 |
| MT46H256M32LFCM-5:A | 256M X 32 DDR DRAM, 5 ns, PBGA90 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT16JSF25664HZ-1G1D1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays |
| MT16JSF25664HZ-1G1D1 TR | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Tape and Reel |
| MT16JSF25664HZ-1G1F1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR3 SDRAM MODULE PBF SODIMM 1.5V NON BUF - Trays |
| MT16JSF25664HZ-1G6FZES | 制造商:Micron Technology Inc 功能描述:MT16JSF25664HZ-1G6FZES - Trays |
| MT16JSF51264HZ-1G1D1 | 功能描述:MODULE DDR3 SDRAM 4GB 204SODIMM RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
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