参数资料
型号: MT16JSF25664HY-80BXX
元件分类: DRAM
英文描述: 256M X 64 DDR DRAM MODULE, ZMA204
封装: LEAD FREE, MO-268, SODIMM-204
文件页数: 2/20页
文件大小: 651K
代理商: MT16JSF25664HY-80BXX
PDF: 09005aef83021ee3/Source: 09005aef83021f5a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF16C256x64H.fm - Rev. B 6/09 EN
10
2008 Micron Technology, Inc. All rights reserved
2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
Electrical Specifications
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to
ensure the required supply voltage is maintained.
Table 8:
Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades
Module Speed Grade
Component Speed Grade
-1G5
-15F
-1G4
-15E
-1G3
-15
-1G1
-187E
-1G0
-187
-80C
-25E
-80B
-25
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