参数资料
型号: MT29C2G24MAKLACG-75IT
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA152
封装: GREEN, VFBGA-152
文件页数: 1/15页
文件大小: 421K
代理商: MT29C2G24MAKLACG-75IT
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP
Features
Preliminary
PDF: 09005aef8326e5ac / Source: 09005aef8326e59a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN
1
2008 Micron Technology, Inc. All rights reserved.
NAND Flash and Mobile LPDRAM
152-Ball Package-on-Package (PoP)
Combination Memory (TI OMAP)
MT29C Family
Current production part numbers: See Table 1 on page 3
Features
Micron NAND Flash and Mobile LPDRAM
components
RoHS-compliant, “green” package
Separate NAND Flash and Mobile LPDRAM
interfaces
Space-saving package-on-package combination
Low-voltage operation (1.70–1.95V)
Industrial temperature range: –40°C to +85°C
NAND Flash-Specific Features
Organization
Page size
x8: 2112 bytes (2048 + 64 bytes)
x16: 1056 words (1024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Mobile LPDRAM-Specific Features
No external voltage reference required
No minimum clock rate requirement
1.8V LVCMOS-compatible inputs
Programmable burst lengths
Partial-array self refresh (PASR)
Deep power-down (DPD) mode
Selectable output drive strength
STATUS REGISTER READ (SRR) supported1
Figure 1:
PoP Block Diagram
Notes: 1. Contact factory for remapped SRR output.
2. CL = CAS (READ) latency.
Options
Marking
LP-DRAM
166 MHz CL32
-6
133 MHz CL3
-75
NAND Flash
Device
NAND Flash
Power
NAND Flash
Interface
LP-DRAM Power
LP-DRAM Interface
LP-DRAM
Device
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