参数资料
型号: MT29C2G24MAKLACG-75IT
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA152
封装: GREEN, VFBGA-152
文件页数: 8/15页
文件大小: 421K
代理商: MT29C2G24MAKLACG-75IT
PDF: 09005aef8326e5ac / Source: 09005aef8326e59a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN
2
2008 Micron Technology, Inc. All rights reserved.
152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP
Part Numbering Information – 152-Ball PoP
Preliminary
Part Numbering Information – 152-Ball PoP
Micron NAND Flash and LPDRAM devices are available in different configurations and
densities.
Figure 2:
152-Ball Part Number Chart
Note:
Not all possible combinations are available. Contact factory for availability.
MT 29C 1G 24M
A
C
J
A
CG
– x
IT
ES
Micron Technology
Product Family
29C = NAND + LPDRAM MCP
NAND Density
1G = 1Gb
2G = 2Gb
4G = 4Gb
LPDRAM Density
12M = 512Mb
24M = 1024Mb
48M = 2048Mb
Operating Voltage Range
A = 1.8V (1.70–1.95V)
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
Operating Temperature Range
IT = Industrial (–40° to +85°C)
LPDRAM Self Refresh Current
Blank = Standard
LPDRAM Access Time
–6 166 MHz CL3
–75 133 MHz CL3
Package Codes
CA = 152-ball PoP VFBGA (14 x 14 x 0.9mm)
CG = 152-ball PoP VFBGA (14 x 14 x 1.0mm)
JQ = 152-ball PoP TFBGA (14 x 14 x 1.1mm)
NAND Flash Configuration
Width
Density
Generation
C
x8
1Gb
First
D
x16
1Gb
First
J
x8
2Gb
Second
K
x16
2Gb
Second
N
x8
4Gb
First
P
x16
4Gb
First
U
x8
1Gb
Second
V
x16
1Gb
Second
Chip Count
CE#, CS#
Chip Count
A
1, 1
1 NAND, 1 DRAM
B
1, 1
2 NAND, 1 DRAM
C
1, 2
1 NAND, 2 DRAM
D
1, 2
2 NAND, 2 DRAM
LPDRAM Configuration
Type
Width
Density
Generation
J
DDR
x16
1Gb
First
L
DDR
x32
1Gb
First
N
DDR
x16
512Mb
Second
R
DDR
x32
512Mb
Second
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