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参数资料
| 型号： | MT41J512M4JE-187EIT:A |
| 元件分类： | DRAM |
| 英文描述： | 64M X 4 DDR DRAM, PBGA82 |
| 封装： | 12.50 X 15 MM, LEAD FREE, FBGA-82 |
| 文件页数： | 1/11页 |
| 文件大小： | 288K |
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
2Gb: x4, x8 DDR3 SDRAM
Features
PDF: 09005aef826aaadc/Source: 09005aef826a65af
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Gb DDR3 SDRAM.fm - Rev. C 12/07 EN
1
2006 Micron Technology, Inc. All rights reserved.
Advance
DDR3 SDRAM
MT41J512M4 – 64 Meg x 4 x 8 Banks
MT41J256M8 – 32 Meg x 8 x 8 Banks
Features
VDD = VDDQ = +1.5V ±0.075V
1.5V center-terminated push-pull I/O
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
Eight internal banks for concurrent operation
Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
CAS# (READ) latency: 5, 6, 7, 8, 9, 10, or 11
Posted CAS# additive latency (AL): 0, CL - 1, CL - 2
CAS# (WRITE) latency (CWL): 5, 6, 7, 8 based on tCK
Fixed burst length of 8 (BL8) and burst chop of 4
(BC4) via the mode register set (MRS)
Selectable BL8 or BC4 on-the-fly (OTF)
Automatic refresh
Self refresh mode
Supports TC range of 0°C to 95°C
– 64ms, 8,192-cycle refresh at 0°C to 85°C
– 32ms at 85°C to 95°C
Clock frequency: 300–667 MHz
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Output driver calibration
Multipurpose register
Options
Marking
Configuration
– 512 Meg x 4
512M4
– 256 Meg x 8
256M8
FBGA package (Pb-free)
– 82-ball FBGA (x4, x8)
JE
Timing – cycle time
– 1.5ns @ CL = 10 (DDR3-1333)
-15
– 1.5ns @ CL = 9 (DDR3-1333)
-15E
– 1.87ns @ CL = 8 (DDR3-1066)
-187
– 1.87ns @ CL = 7 (DDR3-1066)
-187E
– 2.5ns @ CL = 6 (DDR3-800)
-25
– 2.5ns @ CL = 5 (DDR3-800)
-25E
Revision
:A
Table 1:
Key Timing Parameters
CL = CAS latency
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
tRCD (ns)
tRP (ns)
CL (ns)
-15
1333
10-10-10
15
-15E
1333
9-9-9
13.5
-187
1066
8-8-8
15
-187E
1066
7-7-7
13.1
-25
800
6-6-6
15
-25E
800
5-5-5
12.5
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相关代理商/技术参数 |
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|---|---|
| MT41J512M4V79D3WC1 | 制造商:Micron Technology Inc 功能描述:512MX4 DDR3 SDRAM DIE-COM COMMERCIAL 1.5V - Trays |
| MT41J512M4V89C3WC1 | 制造商:Micron Technology Inc 功能描述:512MX4 DDR3 SDRAM DIE-COM COMMERCIAL 1.5V - Bulk |
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