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参数资料
| 型号： | MT4LC1M16E5 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | EDO DRAM |
| 中文描述： | EDO公司的DRAM |
| 文件页数： | 4/24页 |
| 文件大小： | 385K |
| 代理商： | MT4LC1M16E5 |
4
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
STORED
DATA
1
1
0
1
1
1
1
1
RAS#
CASL#
WE#
X = NOT EFFECTIVE (DON'T CARE)
ADDRESS 1
ADDRESS 0
0
1
0
1
0
0
0
0
WORD WRITE
LOWER BYTE WRITE
CASH#
INPUT
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
INPUT
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
STORED
DATA
1
1
0
1
1
1
1
1
INPUT
DATA
STORED
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
STORED
DATA
0
0
1
0
0
0
0
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
1
0
1
0
1
1
1
1
UPPER BYTE
(DQ8-DQ15)
OF WORD
LOWER BYTE
(DQ0-DQ7)
OF WORD
Figure 3
WORD and BY TE WRITE Example
However, an EARLY WRITE on one byte and a LATE
WRITE on the other byte, after a CAS# precharge has
been satisfied, are permissible.
DRAM REFRESH
Preserve correct memory cell data by maintaining
power and executing any RAS# cycle (READ, WRITE) or
RAS# REFRESH cycle (RAS#-ONLY, CBR or HIDDEN)
so that all 1,024 combinations of RAS# addresses are
executed within
t
REF (MAX), regardless of sequence.
The CBR, EXTENDED and SELF REFRESH cycles will
invoke the internal refresh counter for automatic RAS#
addressing.
An optional self refresh mode is available on the “S”
version. The self refresh feature is initiated by per-
forming a CBR REFRESH cycle and holding RAS# LOW
for the specified
t
RASS. The “S” option allows the user
the choice of a fully static, low-power data retention
mode or a dynamic refresh mode at the extended re-
fresh period of 128ms, or 125μs per row, when using a
distributed CBR REFRESH. This refresh rate can be
applied during normal operation, as well as during a
standby or battery backup mode.
The self refresh mode is terminated by driving
RAS# HIGH for a minimum time of
t
RPS. This delay
allows for the completion of any internal refresh cycles
that may be in process at the time of the RAS# LOW-to-
HIGH transition. If the DRAM controller uses a distrib-
uted refresh sequence, a burst refresh is not required
upon exiting self refresh. However, if the DRAM con-
troller utilizes a RAS#-ONLY or burst refresh sequence,
all 1,024 rows must be refreshed within the average
internal refresh rate, prior to the resumption of normal
operation.
STANDBY
Returning RAS# and CAS# HIGH terminates a
memory cycle and decreases chip current to a reduced
standby level. The chip is preconditioned for the next
cycle during the RAS# HIGH time.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT4LC1M16E5DJ-5 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4LC1M16E5DJ-5S | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4LC1M16E5DJ-6 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4LC1M16E5DJ-6S | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
| MT4LC1M16E5TG-5 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:EDO DRAM |
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