- 您现在的位置：买卖IC网 > PDF目录378679 > MTB16N25E (MOTOROLA INC) TMOS POWER FET 16 AMPERES PDF资料下载
参数资料
| 型号： | MTB16N25E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 16 AMPERES |
| 中文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 259K |
| 代理商： | MTB16N25E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
250
—
—
333
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.17
0.25
Ohm
—
—
3.6
—
4.8
4.2
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
3.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1558
2180
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
281
390
Reverse Transfer Capacitance
—
130
260
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
15
30
ns
Rise Time
(VDD = 125 Vdc, ID = 16 Adc,
VGS = 10 Vdc,
—
64
130
Turn–Off Delay Time
—
56
110
Fall Time
—
44
90
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
53.4
70
nC
(VDS = 200 Vdc, ID = 16 Adc,
—
9.3
—
—
27.5
—
—
17.1
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.915
1.39
1.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
—
234
—
ns
(IS = 16 Adc, VGS = 0 Vdc,
—
170
—
tb
—
64
—
Reverse Recovery Stored Charge
QRR
—
2.165
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MTB20N20E | TMOS POWER FET 20 AMPERES 200 VOLTS |
| MTB2N60E | TMOS POWER FET 2.0 AMPERES 600 VOLTS |
| MTB2P50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS |
| MTB30N06VL | TMOS POWER FET 30 AMPERES 60 VOLTS |
| MTB30P06V | TMOS POWER FET 30 AMPERES 60 VOLTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB16N25ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB16P04J3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
| MTB1-6PAL61 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-6PAL61 - Bulk |
| MTB1-6PAL79 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
| MTB1-6PAL80 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
发布紧急采购，3分钟左右您将得到回复。