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参数资料
| 型号： | MTB16N25E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 16 AMPERES |
| 中文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/10页 |
| 文件大小： | 259K |
| 代理商： | MTB16N25E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
P
Figure 15. D2PAK Power Derating Curve
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size 9 450 mils x 350 mils
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
100
ID = 16 A
10
10
150
300
200
400
1000
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
μ
s
100
μ
s
1 ms
10 ms
dc
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
10
1.0
t, TIME (s)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB16N25ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB16P04J3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
| MTB1-6PAL61 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-6PAL61 - Bulk |
| MTB1-6PAL79 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
| MTB1-6PAL80 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
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