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参数资料
| 型号： | MTB33N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 262K |
| 代理商： | MTB33N10E |
MTB33N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
1
35
79
0
30
50
70
90
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
10
0
20
40
70
90
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
012
30
42
60
66
0.02
0.03
0.06
0.07
0.09
511
23
35
53
65
0.037
0.039
0.043
0.049
0.053
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
1.2
1.6
2.0
20
100
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
24
6
8
10
9 V
5 V
6 V
7 V
8 V
80
60
30
10
2.5 3.0 3.5
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
TJ = 100°C
25°C
55°C
0.04
0.05
18
24
36
48
54
0.051
0.047
0.041
17
29
41
47
59
0.8
30
60
90
10
40
60
80
20
50
6
0.08
0.045
1.0
1.4
1.8
40
50
70
80
4.0 4.5 5.0
VGS = 10 V
ID = 16.5 A
25°C
100°C
VGS = 10 V
15 V
TJ = 55°C
TJ = 125°C
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